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用温度梯度法（ Ｔｅｍｐｅｒａｔｕｒｅ Ｇｒａｄｉｅｎｔ Ｔｅｃｈｎｉｑｕｅ ，简称温梯法或 Ｔ Ｇ Ｔ 法） ，定向籽晶［０００１］ 方向，生长出１１０ｍｍ ×８０ｍ ｍ Ａｌ２ Ｏ３ 单晶，晶体完整、透明。采用硼酸钠玻璃液作为 Ａｌ２ Ｏ３ 晶体的化学抛光和化学腐蚀剂，观察了晶体不同部位处（０００１） 、（１１２０） 晶片的化学腐蚀形貌相，（０００１） 切片的位错腐蚀坑呈三角形，位错密度为２ ×１０３ ～３ ×１０３／ｃｍ２ ；（１１２０） 切片位错腐蚀坑呈菱形，位错密度为７×１０３ ～８ ×１０３／ｃｍ２ ；而且等径生长部位的完整性比放肩处高。利用同步辐射 Ｘ 射线白光衍射实验分析了（０００１） 晶片的（２０２１） ，（１１０１） 和（０２２１） 衍射面内的位错组态。确定了两组位错线的 Ｂｕｒｇｅｒｓ矢量，温梯法生长的 Ａｌ２ Ｏ３ 晶体中的位错主要是刃型位错。
With the temperature gradient method (Temperature Gradient Technique, referred to as the temperature gradient method or T G T method), oriented seed crystal [0001] direction, grow 110mm × 80m m Al2O3 single crystal, the crystal is complete and transparent. The chemical etching morphology of (0001) and (1120) wafers at different positions of the crystal was observed by using sodium borate glass as chemical polishing and chemical etchant for Al 2 O 3 crystal. The dislocation pit of (0001) The error density is 2 × 103 ~ 3 × 103 / cm2. (1120) The slice dislocation corrosion pit is rhombus, the dislocation density is 7 × 103 ~ 8 × 103 / cm2. high. Dislocation configurations in (2021), (1101) and (0221) diffractive surfaces of (0001) wafers were analyzed using synchrotron radiation X-ray white light diffraction experiments. The Burgers vectors of two groups of dislocation lines were determined. The dislocations in the Al 2 O 3 crystal grown by the temperature gradient method are mainly edge dislocations.