论文部分内容阅读
美国微波半导体公司研制出两种集成电路功率放大器:它们的性能指标是:在1090兆赫峰值功率输出达400瓦及在1030兆赫峰值功率输出425瓦。这种L波段信标放大器制作在薄膜微带电路上,采用在放大器末级结合四个晶体管输出的高效率直接结合技术,获得大功率输出。馈送给末级放大器输入的分压网络可以同时固定四个晶体管的调谐。放大器是对于50伏晶体管偏压6瓦射频输入设计的,对于10微秒脉冲宽度,最大占空系数是2％,在恒定输入功率和2％的占空系数下,对于60微秒的脉冲宽度输出降至100瓦。脉冲上升和降落时间是100毫微秒,效率大约30％,体积为2.25×5.25×O.75英寸~3
Microwave semiconductor company of the United States developed two kinds of integrated circuit power amplifiers: Their performance indicators are: the peak power output of 1090 MHz up to 400 watts and peak power output of 1030 MHz 425 watts. This L-band beacon amplifier is fabricated on a thin-film microstrip circuit using high-efficiency, direct-bonding technology combined with four transistor outputs at the amplifier's final stage to achieve high power output. The partial pressure network fed to the final amplifier input can fix the tuning of the four transistors at the same time. The amplifier is designed for a 50-V transistor-biased 6-watt RF input with a 2% maximum duty cycle for a 10-microsecond pulse width and a 60-microsecond pulse-width for a constant input power and 2% duty cycle The output drops to 100 watts. Pulse rise and fall time is 100 ns, efficiency is about 30%, volume is 2.25 × 5.25 × O.75 inches ~ 3