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开关式励磁调节器主回路设计中需要考虑的两个主要问题是开关器件的尖峰电压和冲击电流。在分析了关断过程中产生尖峰电压的主要原因基础上 ,提出了开关式励磁调节器限制IGBT(绝缘栅双极型晶体管 )关断时的尖峰过电压的有效方法 ,即直流发电机两端并联大容量电容和IGBT两端并联吸收网络 ,并根据开关状态下电路的近似分析证明了并联大电容以后的稳定性。另外分析了产生开通时冲击电流的原因 ,还给出了主回路缓冲网络参数确定的依据和大致的范围。
Switching excitation regulator main circuit design to consider two major issues is the switching device peak voltage and inrush current. Based on the analysis of the main causes of spike voltage in the turn-off process, an effective method is proposed to limit the peak over-voltage of IGBT (insulated gate bipolar transistor) when the switch-type excitation regulator is turned off, that is, both ends of the DC generator Parallel high-capacity capacitor and IGBT parallel absorption network at both ends, and according to the circuit under the switch state approximate analysis proved the stability of the parallel large capacitor. In addition, the reasons for the inrush current during turn-on are analyzed, and the basis and the general range of the main loop buffer network parameters are also given.