日本东北大学的大野英男教授和俊介富卡米副教授的研究小组利用自旋轨道-转矩感应磁化转换研制出一项新结构的磁存储装置。近二十多年来,该研究小组在开发磁性随机存储器(MRAMs)方面付诸了巨大的努力。一般而言,在反向无限地全速运转情况下,磁性随机存储器被认为有望替代目前使用的以半导体为基础的内存储器,如静态随机存储器(SRAMs)和动态随机访问存储器(DRAMs)。 A research team of Associate Professor Tomi Ono of Tohoku University and Associate Professor Fukami of Northeastern University developed a new structure of magnetic storage device using spin orbit-torque induction magnetization conversion. For nearly two decades, the research team has made tremendous efforts in developing magnetic random access memories (MRAMs). In general, magnetic random access memories are expected to replace the currently used semiconductor-based internal memories, such as SRAMs and DRAMs, in the case of reverse full speed operation.