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本文阐述了利用直流反应溅射Al_2O_3膜的工艺,通过大量实验建立了直流反应溅射Al_2O_3的最佳工艺条件。用子半导体器件的表面钝化,收到良好的经济效益。
In this paper, the process of reactive sputtering Al_2O_3 film by direct current is described. The optimum conditions of DC reactive sputtering of Al_2O_3 are established through a large number of experiments. Sub-semiconductor devices with the surface passivation, received good economic benefits.