用MOCVD技术在偏(100)GaAs衬底上生长了发光波长在1·3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1·3μm的量子点,对比研究了不同In含量的InGaAs应力缓冲层(SBL)和应力盖层(SCL)的应力缓冲作用.结果表明,增加SCL中In含量能有效延伸量子点发光波长到1·3μm,但是随着SBL中In的增加,发光波长变化不明显,并且材料质量明显下降. The InAs quantum dots are regularly arranged in a linear space with a wavelength of 1.3μm on a (100) GaAs substrate by MOCVD. The photoluminescence experiment shows that (100) GaAs InAs quantum dots grown on the substrate have better material quality, the spectrum has greater intensity and narrower line width.In order to get the quantum dot with the wavelength of 1.3μm, we compared the InGaAs stress buffer with different In content (SBL) and stress capping (SCL). The results show that increasing the content of In in SCL can effectively extend the emission wavelength of quantum dots to 1.3 μm, but with the increase of In in SBL, the emission wavelength does not change obviously , And the material quality dropped significantly.