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本文通过精确求解器件内二维电势分布,建立了一种SIT直流特性的解析模型。该模型可解释各种偏置状态下的Ⅰ-Ⅴ特性与数值模拟结果吻合良好。利用该模型研究了主要结构及物理参数对器件电学特性的影响。
In this paper, by analyzing the two-dimensional potential distribution in the device accurately, an analytical model of SIT DC characteristics is established. The model can explain that the Ⅰ-Ⅴ characteristics under various bias conditions are in good agreement with the numerical simulation results. The influence of the main structure and physical parameters on the electrical characteristics of the device is studied by using this model.