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在电子辅助热丝CVD中,研究刀具预处理对金刚石薄膜生长速度的影响。在保持生长条件不变的前提下,经酸腐蚀处理的刀具的侧、背面镀铜能使金刚石薄膜的生长速度从没有镀铜时的4μm/h增加到镀铜后的10.6μm/h。镀铜处理提高了刀具的电导率,使得热丝发射的电子在偏压电场的作用下,在刀具表面附近聚集,加速氢气和丙酮的裂解,从而提高金刚石薄膜生长速度。SEM和Raman测试结果表明,高速生长的金刚石薄膜仍然具有很高质量。
In electron assisted hot filament CVD, the effect of tool pretreatment on the diamond film growth rate was investigated. Under the condition of the same growth, the growth of the diamond thin film can be increased from 4μm / h without copper plating to 10.6μm / h after copper plating by copper plating on the side and the back of acid-etched tool. Copper plating improves the electrical conductivity of the tool, making the electrons emitted by the hot wire gather under the surface of the tool under the action of the bias electric field, accelerating the cracking of hydrogen and acetone, thereby increasing the growth rate of the diamond film. SEM and Raman test results show that high-growth diamond films are still of high quality.