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报道了用 Ｘ 射线母掩模复制子掩模的工艺和用北京同步辐射装置（ Ｂ Ｓ Ｒ Ｆ）３ Ｂ Ｉ Ａ 光刻束线获得的 ０５μｍ 光刻分辨率的实验结果。
The experimental results on the lithography resolution of 0.5 μm obtained by using the X-ray masking replica mask and the Beijing Synchrotron Radiation Facility (B S R F) 3 B I A lithography beam are reported.