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采用真空热蒸发方法,以高纯CdTe粉末为蒸发源,在石英和AZO玻璃上沉积了厚度约为485 nm的CdTe薄膜,随后在N2氛围中于250~400℃条件下进行后退火处理。利用X射线衍射仪、拉曼光谱仪、分光光度计和数字源表测量了不同退火温度条件下样品的结构、光学和电学特性。结果表明,所制备的薄膜为立方闪锌矿结构,择优取向为<111>晶向,提高退火温度可以促进薄膜结晶;光学测量结果证实,随退火温度升高,薄膜样品的光学带隙由1.527 e V减小到1.496 e V;电流-电压测试表明,薄膜电导率随退火温度的增加,由0.97μS/cm增大至87.3μS/cm。
A CdTe thin film with a thickness of about 485 nm was deposited on quartz and AZO glass by vacuum thermal evaporation method using high purity CdTe powder as the evaporation source and then annealed at 250-400 ℃ in N2 atmosphere. The structure, optical and electrical properties of samples at different annealing temperature were measured by X-ray diffraction, Raman spectroscopy, spectrophotometer and digital source meter. The results show that the prepared film is cubic sphalerite structure, the preferred orientation of the <111> crystal orientation, increasing the annealing temperature can promote the crystallization of the film; optical measurements confirmed that with the annealing temperature increases, the optical band gap of the sample film from 1.527 eV decreases to 1.496 eV. The current-voltage tests show that the conductivity of the film increases from 0.97μS / cm to 87.3μS / cm with the increase of annealing temperature.