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为了保证在低温加工及溶液制备的情况下,能够提升高度区域规则的聚(3-己基噻吩)(RR-P3HT)有机场效应晶体管(OFET)的器件性能,本文研究了室温下乙醇及乙腈非溶剂的掺杂,及其对高分子自组织机理与导致的RR-P3HTOFET电学性能的影响.实验发现,适量进行乙醇及乙腈非溶剂的掺杂,将促进RR-P3HT薄膜形成更多期望的微晶粒薄片结构,完善高分子自组织机理,导致RR-P3HTOFET电学性能的提升.实验表明,在RR-P3HT溶液中进行5%乙腈添加后,其器件场效应迁移率的值由原来的4.04×10-4cm2/V·s增加到3.39×10-3cm2/V·s,RR-P3HTOFET的场效应迁移率增强了大约8倍.而当乙醇及乙腈非溶剂掺杂浓度过量时,二维微晶粒结构的有序度降低,并且产生了明显的沉淀析出现象,薄膜呈现明显的龟裂现象,这样的沉淀物析出物在导电沟道里将作为缺陷存在,降低了RR-P3HT OFET的器件性能.
In order to improve the device performance of poly-3-hexylthiophene (RR-P3HT) organic field-effect transistor (OFET) with high region regularity in low temperature processing and solution preparation, Solvent doping, and its self-organization mechanism of polymer and electrical properties of RR-P3HTOFET caused by the experiment found that the appropriate amount of ethanol and acetonitrile non-solvent doping will promote the RR-P3HT film to form more desirable micro Grain structure and improve the self-organization mechanism of the polymer, leading to the improvement of electrical properties of RR-P3HTOFET.The experimental results show that the field-effect mobility of RR-P3HT solution increases from 4.04 × The field-effect mobility of RR-P3HTOFET is enhanced by about 8 times with the increase of 10-4cm2 / V · s to 3.39 × 10-3cm2 / V · s.When the non-solvent doping concentration of ethanol and acetonitrile is excessive, The orderliness of the grain structure decreases, and a clear precipitation phenomenon occurs. The film shows obvious cracking phenomenon. Such precipitate precipitation exists in the conductive channel as a defect, reducing the device performance of the RR-P3HT OFET.