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应用快速热退火的方法将 Ga As/Al Ga As多量子阱红外探测器的峰值响应波长从7.7μm移动到 8～ 1 4μm大气窗口内 .通过测量单元器件的光电流谱、响应率和 I- V特性 ,分析了快速热退火对 Ga As/Al Ga As多量子阱红外探测器性能的影响
The peak response wavelength of Ga As / AlGaAs multiquantum well infrared detector was moved from 7.7μm to 8 ~ 14μm atmospheric window by the rapid thermal annealing method.By measuring the photocurrent spectrum, response rate and I- V characteristics, the effect of rapid thermal annealing on the performance of Ga As / Al Ga As multiquantum well infrared detectors