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In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm~2 SiGe HBT over a wide temperature range(from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
In this work, temperature dependences of small-signal model parameters in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients , based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm ~ 2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.