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This study focuses on the effect of V-doping on the ferromagnetism(FM) of 6H-SiC powder.The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice.The Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6H-SiC are hardly varied.It is found that after the V-doping process,the saturation magnetization(Ms) and the vacancy concentration of 6H-SiC are both increased.From these results,it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration,thus resulting in the increase of Ms of V-doped 6H-SiC.
This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H-SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice. The Raman spectra reveal that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H-SiC are hardly changed. It is found that after the V-doping process, the saturation magnetization (Ms) and the vacancy concentration of 6H-SiC are both varied. it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of Ms of V-doped 6H-SiC.