中国科学院苏州纳米技术与纳米仿生研究所研究员杨辉团队在硅上研制出第三代半导体氮化镓基激光器,这也是世界上第一支可以在室温下连续工作的硅衬底氮化镓基激光器。相关研究成果已于近日刊登在国际鼎级的光学学术期刊《自然·光子学》杂志上。在硅衬底上直接生长沉积高质量的第三代半导体氮化镓材料,不仅可以借助大尺寸、低成本硅晶圆及其自 Yang Hui, a researcher at Suzhou Institute of Nanotechnology and Nanobiology, Chinese Academy of Sciences, has developed the third generation semiconductor gallium nitride based laser on silicon, which is also the world’s first silicon-based gallium nitride based laser that can work continuously at room temperature . Relevant research results have been published recently in the international Ding optical academic journal “Nature · Photonics” magazine. The direct growth and deposition of high-quality third-generation semiconductor gallium nitride material on a silicon substrate can be achieved not only with large-size, low-cost silicon wafers and their