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采用超声喷雾热解法在玻璃基底上一步合成富Cu的CuInS2薄膜。研究基底生长温度对CuInS2薄膜相结构、表面形貌、导电性、透光率及禁带宽度的影响。XRD分析表明薄膜的主相为CuInS2,同时存在Cu2S和Au-Cu第二相,薄膜具有沿(112)择优取向生长特性。拉曼分析证明黄铜矿存在CuInS2相、Cu-Au相及Cu2S相。SEM表明薄膜的表面平整、均匀,有较高的致密性。随着生长温度的不断升高,Cu2S衍射强度增强,相含量增加;薄膜结晶性逐渐改善,导电性提高。可见光光谱分析表明薄膜对可见光具有较强的吸收性,禁带宽度为1.43eV。
Cu-doped CuInS2 thin films were synthesized on glass substrates by ultrasonic spray pyrolysis. The effect of substrate growth temperature on the phase structure, surface morphology, electrical conductivity, transmittance and band gap of CuInS2 thin films was investigated. XRD analysis showed that the main phase of the film is CuInS2, while the second phase of Cu2S and Au-Cu exist, the film has the preferred orientation along the (112) growth. Raman analysis proved that CuInS2 phase, Cu-Au phase and Cu2S phase existed in chalcopyrite. SEM shows that the surface of the film is smooth, uniform and has high density. As the growth temperature increases, the diffraction intensity of Cu2S increases and the phase content increases. The crystallinity of the films gradually improves and the conductivity increases. Visible light spectral analysis showed that the film has a strong absorption of visible light, the bandgap width of 1.43eV.