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RuS2 thin films were prepared by the cost-effective chemical method——successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 105 Ω.cm.
RuS2 thin films were prepared by the cost-effective chemical method - successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500 ° C for 30 min. The band gap of the as-deposited films is found to be 1.85 eV , and the electrical resistivity of them is in the order of 105 Ω.cm.