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利用半导体器件二维模拟软件数值模拟计算了不同上升时间的快前沿电磁脉冲对PN结的毁坏过程,对计算结果作了分析,得到了一维器件模拟无法得到的电流通道等其他二维效应,详细地给出了器件正常工作、失效直至烧毁的全过程。
Using the 2D simulation software of semiconductor device, numerical simulation of the fast front electromagnetic pulse with different rising time on the PN junction of the destruction process, the calculation results were analyzed, one-dimensional device simulation can not get the current channel and other two-dimensional effects, The device is given in detail the normal work, failure until the entire process of burning down.