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对使用等离子体增强化学汽相沉积(PECVD)法在不同淀积条件下制备的非晶硅(a-Si:H)、微晶硅(μc-Si:H)和纳米硅(nc-Si:H)薄膜在200—600℃温度范围进行常规退火研究。用共振核反应技术测量了样品中氢含量C_H值及退火对氢含量及其分布的影响。通过室温下对暗电导率的测量得到退火对nc-si:H薄膜电导率的影响,并与a-Si:H,μc-Si:H薄膜的退火行为作了比较。使用紫外/可见/近红外分光光度计对样品透射率进行了测量,分析计算得到了退火温度T_a与ac-Si:H薄膜光学带隙E_g~(opt)值变化之间的关系。
(A-Si: H), microcrystalline silicon (μc-Si: H) and nanocrystalline silicon (nc-Si: H) prepared under different deposition conditions using a plasma enhanced chemical vapor deposition H) The film was subjected to a conventional annealing study at a temperature in the range of 200-600 ° C. The effects of C_H value and annealing on hydrogen content and their distribution in samples were measured by resonance nuclear reaction. The influence of annealing on the conductivity of the nc-si: H thin film was investigated by measuring the dark conductivity at room temperature and compared with the annealing behavior of a-Si: H and μc-Si: H thin films. The transmittance of the sample was measured by UV / VIS / NIR spectrophotometer. The relationship between the annealing temperature T_a and the value of E_g ~ (opt) of the optical band gap of ac-Si: H thin film was analyzed and calculated.