美国密西西比州的SiC晶体管、二极管及外延片产品开发商—Semi South研究所接到一份267万美元的合同,开发用于高功率雷达系统用的SiC RF晶体管关键制造工艺。这份合同由美国海军研究院授予Semi South研究所领导的一个研究小组、电气总公司综合研究中心和密西西比州大学为合同主要子承包方。该项目旨在加快开发专门用于高功率雷达系统用的SiC RF晶体管并提高其工作能 The South MI Corp., a developer of SiC transistors, diodes and epitaxial wafers in Mississippi, USA, received a $ 2.67 million contract to develop the key manufacturing process for SiC RF transistors for high-power radar systems. The contract was awarded by the United States Naval Research Institute as a research team led by Semi South Research Institute, the Electrical Research Center for Integrated Research and the University of Mississippi as the major contract subcontractors. The project aims to accelerate the development of SiC RF transistors for use in high-power radar systems and to increase their work capacity