本文介绍一种能提高基区硼杂质浓度R_(?)b均匀性的新方法.①传统工艺方法(下称方法①):基区硼扩散分两步,先进行硼予扩,在硅抛光片表面上沉积一定数量的硼杂质原子.再进行主扩再分布,同时进行氧化.其氧化方法是:主扩硅片进炉时,开始干氧氧化40分钟,然后转湿氧氧化150分钟,再转干氧氧化180分钟,即:干O_240分钟+湿O_2150分钟+干O_2180分钟 In this paper, we introduce a new method to improve the homogeneity of the boron impurity concentration R _ (?) B in the base region.① The traditional process (referred to as method ①): The diffusion of boron in the base zone is carried out in two steps, A certain amount of boron impurity atoms are deposited on the surface of the wafer, and then the main and the distribution are re-distributed and the oxidation is performed at the same time. The oxidation method is as follows: when the main expansion silicon wafer is charged into the furnace, dry oxidation starts for 40 minutes, Turn dry oxygen oxidation for 180 minutes, namely: dry O_240 minutes + wet O_2150 minutes + dry O_2180 minutes