论文部分内容阅读
,Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of ligh
【作 者】
：
【机 构】
：
Suzhou Institute of Nano-tech and Nano-bionies,Chinese Academy of Sciences,Suzhou 215125,China
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年1期
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