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本文用精确的双极晶体管一维模型叙述了禁带变窄、SRH(肖克莱-里德-霍尔)复合、俄歇复合、载流子-载流子散射和载流子-晶格散射等机构。利用这种晶体管作为一种工具,来研究决定发射极结深为1～8微米的器件的发射极效率的上述这些现象中的每一个现象的相对重要性。结果表明,禁带变窄对2微米或更浅的浅发射极器件是主要的影响因素,SRH 复合对发射极结深大于4微米的器件是主要的影响因素。所给出的计算也表明,对具有1～8微米发射极结深的器件来说,发射极表面浓度和高注入对电流增益有影响。结果表明,对1微米的发射极结深的器件,最佳表面浓度为5×10~(19)厘米~(-3),而对发射极结深大于4微米的器件,直到10~(21)厘米~(-3)还没有达到最佳值。
In this paper, the narrow band gap, SRH (Schleck-Reed-Hall) recombination, Auger recombination, carrier-carrier scattering and carrier-lattice Scattering and other agencies. The use of such a transistor as a tool to study the relative importance of each of these phenomena in determining the emitter efficiency of a device with emitter junction depths of 1 to 8 microns. The results show that the forbidden band narrowing is the main factor for shallow 2μm or shallow shallow emitter devices. SRH recombination is the main factor for devices with emitter junction depth greater than 4μm. The calculations given also show that emitter surface concentration and high injection have an effect on current gain for devices with emitter junction depths of 1 to 8 microns. The results show that the best surface concentration is 5 × 10 ~ (19) cm ~ (-3) for devices with 1 μm emitter junction depth and 10 ~ (21) cm for devices with emitter junction depth greater than 4 μm. ) Cm ~ (-3) has not reached the best value.