根据影响 P型 (Bi XSb1 - X) 2 Te3半导体热电材料优值系数的主要因素和大量实验结果 ,采用高纯原料、筛选配方、慢速区熔长晶及退火等优化工艺 ,在晶锭的相当长的范围内获得了晶体结构完整、热电性能均匀、优值系数高达 3.46的半导体热电材料 According to the main factors influencing the merit coefficient of the P type (Bi XSb1 - X) 2 Te3 semiconductor thermoelectric material and a large number of experimental results, the optimum conditions of high - purity raw materials, screening formulation, slow zone melt growth and annealing, A very long range of crystal structure obtained, uniform thermoelectric properties, merit coefficient as high as 3.46 semiconductor thermoelectric materials