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采用光学显微镜、扫描电子显微镜（ＳＥＭ）及扫描俄歇微探针（ＳＡＭ）等表面分析技术对ＧａＡｓ功率场效应管（ＦＥＴ）源－漏烧毁失效现象进行了分析研究。ＳＥＭ分析结果表明，源－漏烧毁失效的表面形貌状况较为复杂，烧伤区域的表面形态不尽一致。有源极烧毁较为严重的情况，也有漏极烧伤较严重的情况。ＳＡＭ分析结果说明，源－漏烧毁ＦＥＴ中烧毁处附近的外表完好的源、漏条Ａｕ薄膜下欧姆接触金属薄膜层已完全消失，烧毁源、漏条部位表面化学元素有Ｃ、Ｏ、Ｔｉ、Ｎ和Ｇａ，其中Ｃ、Ｏ在表层几十纳米深度内均有相当高的含量。结合分析结果，讨论了源－漏烧毁的物理机理。
GaAs power FET (FET) source-drain burn-out failure phenomenon was analyzed by using surface analysis techniques such as optical microscope, scanning electron microscope (SEM) and scanning Auger microprobe (SAM) The results of SEM analysis showed that the surface topography of source-drain burned failure was complicated, and the surface morphology of burn area was not uniform. Active burn more serious situation, there are more serious cases of drain burn. The results of SAM analysis show that the ohmic contact metal thin film layer under Au thin film has completely disappeared when the source-drain burn-out FET burns near the burned-out area, and the chemical elements of the burned source and drain section surface are C, O, Ti, N and Ga, in which C, O in the surface depth of dozens of nanometers have a very high content. Combined with the analysis results, the physical mechanism of source-drain burnout is discussed.