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采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .
The Ga In NAs quantum well RCE detector with working wavelength of 1 and 3 μm was grown on Ga As substrate by molecular beam epitaxy (MBE) with a dc-N plasma N source.The transmission matrix method was used to analyze the device structure The absorption zone is composed of three Ga In NAs quantum wells and the devices are separated by wet etching and polyimides.The maximum quantum efficiency at zero bias is 12% (FWHM) of 5.8 nm, 3 d B bandwidth of 30 MHz and a dark current of 2 × 10 11 A. The MBE growth conditions and device structure optimization further improve the performance of the device.