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The effect of oxygen partial pressure(Po_2) during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide(a-IGZO) thin film transistors(TFTs) is investigated.As Po_2 increases from 10%to 30%,it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress.Based on the x-ray photoelectron spectroscopy measurement,the concentration of oxygen vacancies(Ov) within the a-IGZO layer is suppressed by increasing Po_2.Meanwhile,the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po_2.Therefore,the improved interface quality with increasing Po_2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects,which agrees with the enhanced bias stress stability of the a-IGZO TFTs.
The effect of oxygen partial pressure (Po_2) during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated. As Po 2 increases from 10% to 30% is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress.Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies (Ov) within the a-IGZO layer is suppressed by increasing Po_2.Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel / dielectric interface keeps drops with increasing Po_2.Therefore, the improved interface quality with increasing Po_2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.