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1.5.1晶体管工作原理以PNP型为例,图1.20上发射极与基极间正偏置,大量空穴由基极注入。基极为N型时,多数载流子为电子,注入的空穴与电子复合的可能性是存在的。这种复合只在基极范围内且基极多数载流子的电子数目相当少(即接近杂质浓度低的本征半导体),因而在基极范围内注入的空穴几乎不复合,扩散至集电区。由于集电结为反偏置,但对到达的空穴却是正偏置状态,因而形成集电电流。设各端子电流分别为I_E,I_B,I_C时,有
1.5.1 Working Principle of Transistor Take PNP type as an example, the emitter and base are positively biased in Figure 1.20, a large number of holes are injected from the base. When the base is N-type, the majority of carriers are electrons, and the possibility of recombination of injected holes and electrons exists. This recombination is only in the base range and the base majority has fewer carriers (ie, closer to the intrinsic semiconductor with lower impurity concentration) so that the holes injected in the base range are hardly recombined and diffuse to the set Electricity area. Since the collector junction is reverse biased, it is positively biased towards the arriving holes, thus forming a collector current. Set the terminal current is I_E, I_B, I_C, there