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针对快速热退火引起的N最近邻原子环境的变化,建立了热平衡态下Ga1-xInxNyAs1-y合金中各二元化合键的统计分布模型.并将理论计算得到的N周围平均In原子数r引入到BAC经验模型中,对退火后的Ga1-xInxNyAs1-y体材料带隙进行了计算.最后,利用讨论BAC模型中电子波函数边界条件的方法,计算了无应变Ga1-xInxNyAs1-y/GaAs量子阱的带隙.
Aiming at the change of the N nearest neighbor atom environment caused by rapid thermal annealing, a statistical distribution model of each binary bond in Ga1-xInxNyAs1-y alloy under the thermal equilibrium condition is established. The theoretical average number of In atoms r around N To the BAC empirical model, the bandgap of the annealed Ga1-xInxNyAs1-y bulk material was calculated.Finally, using the method of discussing the boundary conditions of the electron wave function in the BAC model, the unstrained Ga1-xInxNyAs1-y / GaAs quantum Well band gap.