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利用毛细管中的差热分析研究了磷硅镉晶体的热力学性质,得到了磷硅镉的熔点和凝固点分别为1139和1126℃,过冷度为13℃。根据差热分析结果,对晶体生长炉以及温场分布进行了优化,采用改进的布里奇曼法生长得到了直径15 mm,长40 mm的无开裂磷硅镉晶体。利用X射线衍射,能谱以及红外分光光度计对晶体进行了表征。发现了(112)解理面,能谱测试表明晶体符合化学计量配比,在7000~1500 cm~(-1)红外透光范围内红外透过率达到55%。所有表征手段显示得到的晶体结构完整,光学性能良好,可用于器件的制作。
The thermodynamic properties of phosphorus-phosphorus-silicon-cadmium crystals were investigated by differential thermal analysis in capillary. The melting point and freezing point of phosphorus-silicon-cadmium were 1139 and 1126 ℃, respectively, and the degree of undercooling was 13 ℃. According to the results of differential thermal analysis, the crystal growth furnace and the temperature field distribution are optimized. The crack-free phosphorus, silicon-cadmium crystal with a diameter of 15 mm and a length of 40 mm was grown by an improved Bridgman method. The crystal was characterized by X-ray diffraction, energy dispersive spectroscopy and infrared spectrophotometer. The (112) cleavage plane was found. The results of EDS showed that the crystals were stoichiometric, and the infrared transmittance reached 55% in the infrared transmission range of 7000-1500 cm -1. All the characterization methods showed that the obtained crystal structure is complete and the optical properties are good, which can be used for device fabrication.