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本文报导了用卤素灯作加热源的快速退火系统研究Si~+注入高纯SI-GaAs的快速退火特性,得到了良好的注入激活层,并制成了6GHz下输出功率为0.5W,相关增益为3.5dB的功率MESFET。
In this paper, the rapid annealing system using halogen lamps as heating source was investigated to investigate the rapid annealing properties of Si ~ + implanted high purity SI-GaAs. A good injection activation layer was obtained and the output gain was 0.5W at 6GHz. The relative gain 3.5dB power MESFET.