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激光电化学刻蚀是将激光加工技术和电化学加工技术有机结合起来而形成的一种复合型刻蚀工艺。为了研究电解液对激光电化学刻蚀硅的影响,本文采用248nm KrF准分子激光作为光源聚焦照射浸在KOH溶液中的阳极半导体n-Si上,实现激光诱导电化学刻蚀。在实验的基础上,研究了化学溶液对激光电化学刻蚀Si的刻蚀表面形貌和刻蚀速率的影响,并对其产生的原因进行了分析。试验结果表明:化学溶液对刻蚀工艺的影响主要来源于不同浓度的溶液对激光的吸收和折射;采用吸收率较小、浓度较低的溶液和控制液膜厚度能有效减小溶液飞溅和溶液折射。本文中,溶液的厚度控制在1mm左右。
Laser electrochemical etching is the laser processing technology and electrochemical processing technology combined to form a composite etching process. In order to study the influence of electrolyte on the electrochemical etching of silicon by laser, a 248 nm KrF excimer laser was used as a light source to focus on n-Si, an anode semiconductor immersed in a KOH solution to achieve laser-induced electrochemical etching. Based on the experiment, the influence of chemical solution on the etching surface morphology and etching rate of laser electrochemical etching of Si was studied, and the reasons for its formation were analyzed. The experimental results show that the influence of chemical solution on the etching process is mainly due to the absorption and refraction of the laser by different concentrations of solution. The solution with lower absorption and lower concentration and the thickness of the control liquid film can effectively reduce the solution splash and the solution refraction. In this paper, the thickness of the solution is controlled at about 1mm.