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We report an enhancement-mode InAlN/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be +0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at VGS D0 V and VDS D5 V, which shows a truly normal-off state. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InAlN/GaN HEMT at room temperature and high temperature are reported.The current gain cut-off frequency(fT/ and the maximum oscillation frequency(fmax/ of the enhancement-mode device with a gate length of 0.3 m were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.
We report an enhancement-mode InAlN / GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be +0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS / mm at VGS D0 V and VDS D5 V, which shows a truly normal-off state. The transfer characteristics of the E-mode InAlN / GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency (fT / and the maximum oscillation frequency (fmax / of the enhancement-mode device with a gate length of 0.3 m were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.