针对MEMS开关提高电容比需要提高驱动电压的问题,提出了一种应用于Ku频段的阶跃结构MEMS开关,该结构结合了固支梁开关和悬臂梁开关,使得开关有两个驱动高度。当固支梁被吸合时,悬臂梁高度会随之降低,在增加开关电容比的同时降低了驱动电压。利用开关悬臂梁引入的电感,将开关闭合态LCd谐振点设计在14.5 GHz,使得开关在Ku频段的隔离度尤为优异。使用ANSYS和HFSS软件进行模拟,结果显示所设计开关驱动电压小于32 V,关态和开态电容比达到280,12～18 GHz的隔离度大于37 dB,插入损耗低于0.23 dB,回波损耗高于-17 dB。 Aiming at the problem of increasing the driving voltage by increasing the capacitance ratio of the MEMS switch, a step structure MEMS switch for the Ku band is proposed. The structure incorporates a fixed beam switch and a cantilever switch so that the switch has two driving levels. When the fixed beam is sucked in, the cantilever height will be reduced, increasing the switching capacitance ratio while reducing the driving voltage. By using the inductance introduced by the switch cantilever, the LCd resonant point of the switch closed state is designed at 14.5 GHz, which makes the switch particularly excellent in isolation in the Ku band. The simulation results using ANSYS and HFSS software show that the designed switch drive voltage is less than 32 V, the ratio of on-state to on-state capacitance is 280, the isolation is greater than 37 dB at 12-18 GHz, the insertion loss is lower than 0.23 dB, the return loss Above -17 dB.