采用X射线衍射仪(XRD)和扫面电子显微镜(SEM)研究了短碳纤维表面镀铜层的物相及镀铜层的生长过程,分析了电沉积镀铜机理,优化了其工艺。结果表明,当镀铜电压为1 V时,Cu在碳纤维表面择优位置形核,形核率和长大速度较低,沉积30 min碳纤维表面形成的Cu镀层不完整;1.5 V时沉积30 min的Cu镀层完整性较1 V时明显改善,电压为2 V时沉积30 min可以得到均匀的镀层;当电压为2.5 V时,Cu镀层生长速度显著加快,镀层易脱落。 XRD and SEM were used to study the growth of the copper phase and the copper plating layer on the surface of short carbon fiber. The mechanism of electrodeposition copper plating was analyzed and its process was optimized. The results show that when the voltage of copper plating is 1 V, Cu preferentially nucleates on the carbon fiber surface, and the nucleation rate and growth rate are low. The Cu coating formed on the carbon fiber surface is incomplete after deposition for 30 min. When the voltage is 2 V, the deposition of Cu is more uniform than that of 1 V. When the voltage is 2.5 V, the deposition rate of Cu is significantly increased and the coating is easy to peel off.