强烈的基体效应一直是造成二次离子质谱（SIMS）难以定量分析和解释的主要原因。受其影响，常规SIMS，即M±－SIMS（检测原子型二次离子M＋或M－，M是要分析的元素）的适用范围受到了很大的限制。近几年来，上述状况已经通过一种新技术开发得到明显改善，这就是MCS＋－SIMS技术，即在CS＋一次离子轰击下检测分子型二次离子MCS＋而不是M±。由于该技术能明显减小甚至消除基体效应，从而开辟了SIMS定量分析的新途径。在综述MCS＋－SIMS技术的由来、发展、特点和应用以及MCS＋的生成机理的基础上，介绍了该技术的扩展思路。 The strong matrix effect has been the main reason for the difficulty of quantitative analysis and interpretation of SIMS. Under its influence, the conventional SIMS, ie, M ± -SIMS (detecting atomic secondary ions M + or M-, M is the element to be analyzed) has been greatly limited in its applicability. In recent years, the above situation has been significantly improved by the development of a new technology, which is the MCS + -SIMS technology, which detects the molecular type of secondary ion MCS + instead of M ± under CS + primary ion bombardment. Because of this technology can significantly reduce or even eliminate the matrix effect, thus opening up a new way SIMS quantitative analysis. On the basis of a review of the origin, development, characteristics and application of MCS + -SIMS technology and the generation mechanism of MCS +, the extended idea of ​​this technology is introduced.