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【摘 要】
：
A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted mol
【机 构】
：
StateKeyLaboratoryforSurfacePhysics,CollegeofPhysicsandEngineering,BeijingUniversityofTechnology
【出 处】
：
中国科学：物理学、力学、天文学英文版
【发表日期】
：
2004年5期
【基金项目】
：
The authors would like to thank Prof. Zhou Junming for the technical assistance. This work was supported by the National Natural Science Foundation of China (Grant Nos. 60376004, 10174089, and 6002140
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