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对自组装生长的Ge量子点超晶格样品进行了光荧光谱 (PL谱 )和拉曼散射谱 (Raman谱 )实验测量研究 .对Si的TO发光峰和Ge的发光峰特征进行了深入讨论 ,通过对变温PL谱的拟合及分析提出了对Ge量子点尺寸和其电子有效质量一种新的测评方法 ;首次在非共振Raman模式下观测到低频声子模 ,研究了样品的结构组份、应变及声子限制效应间的关联性 .
The PL spectra and Raman spectra of Ge quantum dots superlattice samples grown by self-assembly were investigated experimentally.The TO emission peaks of Si and the luminescence peaks of Ge were discussed in depth , A new method for measuring the size and electronic effective mass of Ge quantum dots was proposed by fitting and analyzing the variable temperature PL spectra. The low frequency phonon modes were observed for the first time in the non-resonant Raman mode and the structure groups Correlation between strain, strain and phonon limiting effects.