论文部分内容阅读
刚制备的多孔硅与金属盐溶液接触会产生金属离子在多孔硅表面的吸附现象.实验显示这一现象只发生在新鲜的多孔硅表面,而存放一月以后的样品不具备此性质.文中把这一现象归因于新鲜的多孔硅表面电子的富集,溶液中金属离子从多孔硅表面获得电子而附着.多孔硅表面电镀金属过程中,一定电压下电镀电流密度在起始阶段逐渐下降,可以用一个指数关系式较好地描述,在本文中用一个唯象模型予以解释.
The newly prepared porous silicon in contact with the metal salt solution will produce adsorption of metal ions on the surface of porous silicon.Experiments show that this phenomenon occurs only on the surface of fresh porous silicon, but after January storage samples do not have this property. This phenomenon is attributed to the enrichment of electron on the fresh porous silicon surface, the metal ions in the solution get attached from the surface of the porous silicon, and the plating current density at a certain voltage gradually decreases in the initial stage during the process of plating the metal on the surface of the porous silicon, It can be better described by an exponential relationship, explained in this paper by a phenomenological model.