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将高能离子注入与常规的平面工艺相结合,实现了硅功率场效应晶体管。这种被称为“隐栅管(Gridistor)”的器件是一种以P型隐埋层作为栅的多沟道场效应晶体管。通过一金属掩蔽层,用不同能量的离子注入(600～900千电子伏),来形成高掺杂的P型栅层,它被埋置在表面以下1微米处,其厚度为0.8微米。由于在器件的有源区没有注入引起的缺陷,实际上可以采用低的退火温度。因此,结构图形的锐度只是由掩蔽的清晰度所决定。用离子腐蚀的金属作掩蔽,以可重复的方法制作了1微米宽的沟道。制作了一些实验结构,以便通过测量它们的电容、跨导和伏安特性来检验离子注入的功效和平面工艺。
Combining high energy ion implantation with conventional planar processes enables silicon power field effect transistors. The so-called “Gridistor” device is a multi-channel FET with a P-type buried layer as a gate. A heavily doped P-type gate layer was formed with a metal mask by ion implantation of different energies (600-900 keV) and buried at 1 micron below the surface with a thickness of 0.8 microns. Due to the absence of defects in the active area of the device, a low annealing temperature can actually be used. Therefore, the sharpness of structure graphics is only determined by the clarity of masking. Using ion-etched metal as a mask, a 1 micron wide channel was made in a repeatable manner. Some experimental structures were made to verify the efficacy of ion implantation and planar processes by measuring their capacitance, transconductance and volt-ampere characteristics.