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本文主要介绍集成电路生产中硅外延的化学过程(单晶的生长反应与腐蚀反应)热力学函数△G~0_T 及 KP 的计算方法—自由焓函数法及其近似计算法和原理。并通过函数的具体计算、讨论外延工艺中对温度及 sicl_4浓度等控制的必要性、以及硅单晶层能顺利生长的化学反应条件。
This article mainly introduces the calculation method of thermodynamic function △ G ~ 0_T and KP in the chemical process of silicon epitaxy in the production of integrated circuits (single crystal growth reaction and corrosion reaction) - free enthalpy function method and its approximate calculation method and principle. Through the concrete calculation of the function, the necessity of controlling the temperature and the concentration of sicl_4 in the epitaxial process and the chemical reaction conditions for the smooth growth of the silicon single crystal layer are discussed.