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光刻胶作为离子束刻蚀的掩膜已得到了普遍采用，由于它在受到离子束轰击时会发热收缩、不利于刻蚀线条高宽比的提高，限制了它的进一步使用。在离子束的轰击下，光刻胶的收缩不仅与其发热程度有关，而且与刻蚀线条的宽度也有关，通过改变刻蚀时基片和旋转台之间的热接触状态发现，光刻胶发热越厉害，收缩量越大。而在光刻胶发热程度很小或者不发热时，收缩量极小，可以忽略不计。而在同一发热状态下，不同宽度线条的光刻胶收缩量也不一样，宽度越大，收缩量就越大，宽度越小，收缩量也越小。结果造成在不同宽度线条的接合处，线条边缘出现弯曲。
Photoresist has been widely used as a mask for ion beam etching. Since it heats and contracts when it is bombarded by ion beam, it is unfavorable to the aspect ratio of etched lines, which limits its further use. Under the ion beam bombardment, the shrinkage of the photoresist is not only related to the degree of heat generation but also related to the width of the etching line. By changing the thermal contact state between the substrate and the turntable during etching, it is found that the photoresist heats The more powerful, the greater the amount of contraction. In the heat of the photoresist is very small or not, the amount of shrinkage is minimal, can be ignored. In the same heating state, different width lines of the photoresist shrinkage is not the same, the greater the width, the greater the amount of shrinkage, the smaller the width, the smaller the amount of shrinkage. As a result of the different width of the line junction, the edge of the line bending.