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本文在深入研究硅费米势和禁带宽度温度特性的基础上，详细探讨了宽温区体硅ＮＭＯＳＴ阈值电压的温度特性及沟道掺杂浓度与栅氧化层厚度对其温度特性的影响，提出了２９８ ～５２３ Ｋ宽温区体硅ＮＭＯＳＴ阈值电压的γ σ因子温度非线性简化模型．该模型的模拟结果与高温ＭＯＳ器件模拟软件ＨＴＭＯＳ的数值模拟结果吻合得很好．
Based on the further study of the temperature dependence of the silicon Fermi potential and the forbidden band width, the temperature characteristics of the bulk NMOSFET threshold voltage and the influence of the channel doping concentration and gate oxide thickness on the temperature characteristics of the bulk-temperature NMOSFET are discussed in detail. A simplified nonlinear model of γ σ factor temperature for the threshold voltage of bulk silicon NMOST in the wide temperature range of 298 ~ 523 K is proposed. The simulation results of this model are in good agreement with the numerical simulation results of high temperature MOS device simulation software HTMOS.