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由于a-Si∶H 薄膜的电子学性质亚稳性在应用方面的重要性,近年来人们对有关电导率、光致发光、电子自旋共振、隙态、掺杂和器件性能等进行了多方面的研究.最近章佩娴等又报道了射频溅射样品在红外区三个氢相关振动模(2000cm~(-1),850cm~(-1),600cm~(-1))光诱导吸收系数变化现象.这一结果对a-Si∶H样品电子学性质亚稳性的进一步研究具有深刻意义,因为它确定地给出一个与具体原子运动相联系的直观模型.基于这一认识,我们对辉光放电样品进行了较为严格细致的有关探讨.本文报道对光诱导光电导可逆变化和红外吸收测量的具体结果.
Due to the importance of the electronic stability of the a-Si: H thin films in applications, there has been a great deal of progress in recent years regarding conductivity, photoluminescence, electron spin resonance, gap state, doping and device properties Recently, Zhang Peixian et al. Reported the changes of light-induced absorption coefficients of three hydrogen-related vibration modes (2000 cm -1, 850 cm -1, and 600 cm -1) This result is of great significance for the further study of the electronic properties of the a-Si: H sample because it gives a definitive model of the visualization associated with the motion of a particular atom. Based on this recognition, Light discharge samples for a more rigorous and detailed discussion.This paper reports on photoconductivity photoconductivity reversible changes and infrared absorption measurement results.