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采用扫描电声显微镜(SEAM)和电子背散射衍射(EBSD)对异质外延在Al2O3衬底上GaN界面区域成像测试分析。异质外延失配应力导致在Al2O3和GaN界面附近的微区晶格畸变在SEAM的声成像中可以清楚看到,而且受应力影响集中区域的微区衬度差异明显。利用EBSD色带图及质量参数分析了失配应力变化,晶格应变和弹性形变在200nm内可以得到释放。
The scanning electron microscopy (SEAM) and electron backscatter diffraction (EBSD) were used to analyze the heteroepitaxial growth on the GaN interfacial region on the Al2O3 substrate. Heteroepitaxial mismatch stress causes the micro-lattice distortion in the vicinity of Al2O3 and GaN interface can be clearly seen in the acoustic imaging of SEAM, and the difference of micro-area contrast of the concentrated area affected by stress is obvious. The change of mismatch stress was analyzed by using the EBSD band diagram and mass parameters. Lattice strain and elastic deformation could be released within 200 nm.