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采用纳米压痕法中的Suresh模型和Lee模型研究不同基底温度对直流磁控溅射制备的Ti薄膜中残余应力大小及分布的影响。将压痕法计算结果与曲率法结果进行比较研究,同时采用原子力显微镜和X射线衍射仪对Ti薄膜的表面形貌及相结构进行分析。结果表明:Suresh模型计算得到的Ti薄膜残余应力值与曲率法结果最为接近,因此Suresh模型更适合测量Ti薄膜中的残余应力。结合纳米压痕和显微结构的分析发现,随着Ti薄膜基底温度的升高,Ti薄膜的晶粒尺寸先增大后变小,残余应力则从压应力转变为拉应力。
Suresh model and Lee model in nanoindentation method were used to study the effects of different substrate temperatures on the residual stress in Ti films prepared by DC magnetron sputtering. The results of indentation method and curvature method were compared. At the same time, the surface morphology and phase structure of Ti film were analyzed by atomic force microscopy and X-ray diffraction. The results show that the residual stress of Ti thin film calculated by Suresh model is closest to the result of curvature method. Therefore, Suresh model is more suitable for measuring the residual stress in Ti thin film. Combined with the nano-indentation and microstructure analysis, it is found that the grain size of Ti film first increases and then decreases with the increase of Ti substrate temperature, and the residual stress changes from compressive stress to tensile stress.