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采用微波等离子体化学气相沉积法 ,用高纯氮气 (99.999% )和甲烷 (99.9% )作反应气体 ,在单晶Si(10 0 )基片上沉积C3N4薄膜 .利用扫描电子显微镜观察薄膜形貌 ,表明薄膜由密排的六棱晶棒组成 .X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β C3N4和α C3N4组成 ,并且这些结果与α C3N4相符合较好 .由虎克定律近似关系式计算了α 和β C3N4的傅里叶变换红外光谱和Raman光谱 ,实验结果支持C—N共价键的存在 .
The C3N4 thin films were deposited on single crystal Si (100) substrates by microwave plasma chemical vapor deposition (CVD) using high purity nitrogen (99.999%) and methane (99.9%) as reaction gases.The morphology of the films was observed by scanning electron microscopy Indicating that the film consists of hexagonal rods with close-packed arrangement.X-ray diffraction and transmission electron microscopy analysis showed that the film mainly consists of β C3N4 and α C3N4, and these results are in good agreement with α C3N4. The Fourier transform infrared spectra and Raman spectra of α and β C3N4 were calculated. The experimental results support the existence of C-N covalent bonds.