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本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10~(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。
In this paper, DC magnetron sputtering deposition system deposited on the glass substrate gallium-doped zinc oxide (GZO) film, the sputtering power is adjusted from 120W to 240W, step length of 30W, the study of the power change on the GZO thin film crystal structure, the surface Morphology, optical properties and electrical properties. The results show that the sputtering power has a significant effect on the resistivity of GZO films. When the sputtering power is 210W, the film has the lowest resistivity of 3.31 × 10 ~ (-4) Ω · cm, and the average optical transmittance in the visible band is close to 84%. With the increase of sputtering power, the surface morphology and morphology of the films changed greatly, and the micro-structure with some unevenness was directly obtained. The compactness of GZO films first increased and then decreased.