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综述了化合物半导体研究与生产的现状,最新进展及今后的展望。日本1990年化合物半导体材料销售额为235亿日元。3T-LEC法在增大单晶的长度和提高单晶质量方面已取得显著进展,直径为76mm、长30cm、重10kg的SI-GaAs单晶国外已投入批量生产。近年来,除HP-LEC法外,人们正在探索其它生长方法,如VGF(垂直梯度凝固)法、VCZ(气氛控制直拉)法和VHB(垂直布里支曼)法等等,并已取得重要进展。本文还介绍了近年来在应用方面,如HEMT、HBT、GaAs IC、可见光LD、蓝色LED等领域的最新进展。在上述内容基础上展望了化合物半导体材料今后的发展方向。
The current situation, latest progress and future prospects of research and production of compound semiconductors are summarized. Japan 1990 compound semiconductor material sales of 23.5 billion yen. The 3T-LEC method has made significant progress in increasing the single crystal length and improving the single crystal quality. The SI-GaAs single crystal with a diameter of 76 mm, a length of 30 cm and a weight of 10 kg has been put into mass production abroad. In recent years, in addition to the HP-LEC method, other growth methods such as VGF (Vertical Gradient Solidification) method, VCZ (Atmospheric Control Czochralski) and VHB (Vertical Bridgman) methods have been explored and have been obtained Important progress. This article also introduces the latest developments in recent years in applications, such as HEMT, HBT, GaAs IC, visible light LD, blue LED and other fields. On the basis of the above content, the future direction of compound semiconductor materials is forecasted.