提出了利用分子束外延方法生长In0.5Ga0.5As/In0.5Al0.5As应变耦合量子点,并分析量子点的形貌和光学性质随GaAs隔离层厚度变化的特点。实验结果表明,随着耦合量子点中的GaAs隔离层厚度从2 nm增加到10 nm,In0.5Ga0.5As量子点的密度增大、均匀性提高,Al原子扩散和浸润层对量子点PL谱的影响被消除,而且InAlAs材料的宽禁带特征使其成为InGaAs量子点红外探测器中的暗电流阻挡层。由此可见,选择合适的GaAs隔离层厚度形成InGaAs/InAlAs应变耦合量子点将有益于InGaAs量子点红外探测器的研究。 The growth of In0.5Ga0.5As / In0.5Al0.5As strain-coupled quantum dots by molecular beam epitaxy is proposed. The morphologies and optical properties of QDs are analyzed with the variation of thickness of GaAs isolation layer. Experimental results show that as the thickness of the GaAs isolation layer increases from 2 nm to 10 nm in the coupled QDs, the density of In0.5Ga0.5As quantum dots increases and the uniformity increases. The diffusion of Al atoms and the PL layer on the quantum dots The effect is eliminated, and the wide bandgap characteristics of InAlAs materials make it a dark current blocking layer in InGaAs QDs. Therefore, choosing appropriate thickness of GaAs isolation layer to form InGaAs / InAlAs strain-coupled quantum dots will be beneficial to the research of InGaAs quantum dot infrared detectors.